liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Epitaxial NaCl structure d-TaNx(001): Electronic transport properties, elastic modulus, and hardness versus N/Ta ratio
Materials Science Department, Frederick Seitz Mat. Res. Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, United States.
Materials Science Department, Frederick Seitz Mat. Res. Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, United States.
Materials Science Department, Frederick Seitz Mat. Res. Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, United States.
Materials Science Department, Frederick Seitz Mat. Res. Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, United States.
Show others and affiliations
2001 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 90, no 6, 2879-2885 p.Article in journal (Refereed) Published
Abstract [en]

While metastable Bl-NaCl-structure d-TaNx. is presently used in a variety of hard coating, wear-resistant, and diffusion barrier applications, it is a complex material exhibiting a wide single-phase field, x?0.94-1.37, and little is known about its fundamental properties. Here, we report physical properties of epitaxial d-TaNx. layers grown as a function of x on MgO(00) by ultrahigh vacuum reactive magnetron sputter deposition. The room-temperature resistivity (? = 225 µO cm), hardness (H = 30.9 GPa), and elastic modulus (E = 455 GPa) of d-TaNx(001) are independent of x over the range 0.94-1.22. However, changes in the electronic structure associated with increasing x>1.22 lead to an increase in ? with a decrease in H and E. All d-TaNx(001) layers exhibit negative temperature coefficients of resistivity between 20 and 400 K due to weak carrier localization. d-TaNx is superconducting with the highest critical temperature, 8.45 K, obtained for layers with the lowest N/Ta ratio, x=0.94. Based upon the above results, combined with the fact that the relaxed lattice constant a0 shows only a very weak dependence on x, we propose that the wide phase field in d-TaNx is due primarily to antisite substitutions of Ta on N (and N on Ta) sites, rather than to cation and anion vacancies. To first order, antisite substitutions in TaNx are isoelectronic and hence have little effect on charge carrier density. At sufficiently high N/Ta ratios, however, simple electron-counting arguments are no longer valid since large deviations from stoichiometry alter the character of the band structure itself. © 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 90, no 6, 2879-2885 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47261DOI: 10.1063/1.1391214OAI: oai:DiVA.org:liu-47261DiVA: diva2:268157
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2016-08-31

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Odén, MagnusHultman, Lars

Search in DiVA

By author/editor
Odén, MagnusHultman, Lars
By organisation
The Institute of TechnologyNanostructured Materials Thin Film Physics
In the same journal
Journal of Applied Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 149 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf