Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport
2001 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 230, no 3-4, 473-476 p.Article in journal (Refereed) Published
We report on studies of an In0.12Ga0.88N/GaN structure with three 35 Å thick quantum wells (QWs) grown by metalorganic vapor phase epitaxy with employment of mass transport. The mass-transport regions demonstrate a threading dislocation density less than 107 cm-2. The photoluminescence (PL) spectrum is dominated by a 40 meV-narrow line centered at 2.97 eV at 2 K. This emission has a typical PL decay time of about 5 ns at 2 K within the PL contour. An additional line with longer decay time (about 200 ns) is observed at an energy about 2.85 eV. The position of this line shifts towards higher energies with increasing excitation power. The data are consistent with a model, where the PL originates from at least two nonequivalent QWs, which could be realized due to a potential gradient across the layers. © 2001 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2001. Vol. 230, no 3-4, 473-476 p.
A3. Quantum wells, B1. Nitrides, B2. Semiconducting III-V materials, B3. Light emitting diodes
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47274DOI: 10.1016/S0022-0248(01)01257-XOAI: oai:DiVA.org:liu-47274DiVA: diva2:268170