Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
2001 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 230, no 3-4, 381-386 p.Article in journal (Refereed) Published
The influence of high temperature buffer layers on the structural characteristics of GaN grown by hydride vapour phase epitaxy on sapphire was investigated. Strain relaxation as well as mismatch-induced defect reduction in thick GaN layers grown on AlN buffer was microscopically identified using cathodoluminescence and micro-Raman spectroscopy in cross-section of the films. The results were correlated with photoluminescence and Hall-effect data of layers with different thicknesses. These relaxation processes were suggested to account for the specific defect distribution in the buffers revealed by high-resolution X-ray diffraction and transmission electron microscopy. © 2001 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2001. Vol. 230, no 3-4, 381-386 p.
A1. Crystal structure, A1. Defects, A1. Optical microscopy, A1. Stresses, A3. Hydride vapor phase epitaxy, B1. Nitrides
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47280DOI: 10.1016/S0022-0248(01)01264-7OAI: oai:DiVA.org:liu-47280DiVA: diva2:268176