New NO2 sensor based on Au gate field effect devices
2001 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, Vol. 78, no 1-3, 195-201 p.Article in journal (Refereed) Published
A new NO2 field effect gas sensor based on Au gates is demonstrated and the influence of gate morphology on sensor response is evaluated. A sensitization mechanism, for non-catalytic continuous gates, based on grain boundary diffusion is proposed. The sensors are fabricated as MOS (metal-oxide-semiconductor) capacitors with sputtered or thermal evaporated Au gates (at different substrate temperatures) with thickness between 75 and 960 nm. The devices' sensitivity, in the range of 15-200 ppm of NO2 in dry air, depends strongly on gate morphology, shorter response times and larger voltage shifts are correlated with smaller grain sizes. Scanning-electron-microscope (SEM) images show that the microstructure is very stable after 5 months of gas exposure at temperatures up to 200°C. The sensors are selective to NO2 (with NO, H2 and CO as interfering gases) and selectivity depends also on gate structure. © 2001 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2001. Vol. 78, no 1-3, 195-201 p.
Chemical gas sensor, Field effect, Gold gates, Nitrogen dioxide
IdentifiersURN: urn:nbn:se:liu:diva-47284DOI: 10.1016/S0925-4005(01)00812-7OAI: oai:DiVA.org:liu-47284DiVA: diva2:268180