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Hydrogen detection at high concentrations with stabilised palladium
Faculty of Electrical Engineering, Institute of Physics, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .ORCID iD: 0000-0002-0873-2877
DAAD Fellow, Central Electronics Engineering Research Institute, Pilani 333031, India.
Faculty of Electrical Engineering, Institute of Physics, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany.
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2001 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 78, no 1-3, 138-143 p.Article in journal (Refereed) Published
Abstract [en]

In order to improve the stability to high hydrogen concentrations, of hybrid suspended gate field effect transistors (HSGFETs) with thin palladium films as sensitive layer, Pd-Ni and Pd-Ag alloys have been produced by co-evaporation techniques in UHV. In this paper, the preparation methods as well as hydrogen response measurements are presented. The observed results show that the Pd-Ni alloy is an appropriate material for hydrogen sensing at concentrations up to 2% H2, even at room temperature. The response to 2% H2 is around 500 mV at dry conditions. It is reduced to less than half of this value with moistened carrier gas, but at the same time, the desorption time is lowered. In contrast, the Pd-Ag alloy was not stable. A large drift of the sensor signal was observed and the morphology as well as the composition had changed after the test gas exposures. © 2001 Published by Elsevier Science B.V.

Place, publisher, year, edition, pages
2001. Vol. 78, no 1-3, 138-143 p.
Keyword [en]
HSGFET, Hydrogen, Low temperature sensor, Nickel, Palladium-alloy, Silver
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47285DOI: 10.1016/S0925-4005(01)00804-8OAI: oai:DiVA.org:liu-47285DiVA: diva2:268181
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Eriksson, Mats

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