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Bound excitons in GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2001 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 13, no 32, 7011-7026 p.Article in journal (Refereed) Published
Abstract [en]

The electronic structure of bound excitons in GaN is discussed, with reference to available optical data. Emphasis is given to the neutral-donor and neutralacceptor spectra, which are the most prominent ones in the experimental photoluminescence data. Two dominant donor bound excitons are observed with photoluminescence lines just above 3.47 eV at 2 K in unstrained samples, tentatively associated with Si and O shallow donors. Several acceptor bound excitons are present, the most prominent one with a photoluminescence line at about 3.466 eV is tentatively assigned to the Mg acceptor. We attempt an explanation of the available data from magneto-optical experiments on this line in terms of a spin-like acceptor hole, as observed in independent magnetic resonance data. Characteristic deep emissions related to P and As doping are reported, they may be interpreted in terms of isoelectronic bound excitons. Excitons bound to structural defects in GaN are also briefly discussed.

Place, publisher, year, edition, pages
2001. Vol. 13, no 32, 7011-7026 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47291DOI: 10.1088/0953-8984/13/32/309OAI: oai:DiVA.org:liu-47291DiVA: diva2:268187
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Monemar, Bo

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