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Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies
Institute of Solid State and Semiconductor Physics, P. Brovki Street 17, 220072 Minsk, Belarus.
Institute of Solid State and Semiconductor Physics, P. Brovki Street 17, 220072 Minsk, Belarus.
Institute for Materials Research, Tohoku University, Sendai 980-77, Japan.
Lindström, J.L., Department of Physics, University of Lund, S-221 00 Lund, Sweden.
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2001 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 302-303, 180-187 p.Conference paper, Published paper (Other academic)
Abstract [en]

The formation kinetics of small oxygen clusters in hydrogenated Si has been studied by means of infrared absorption measurements. Hydrogen was introduced into the crystals by in-diffusion from H2 gas at 1200-1300°C. The samples were heated at temperatures in the range of 280-370°C for different durations. At initial stages of heat-treatment, enormous generation rates of the oxygen dimer have been observed in hydrogenated samples. This indicates highly enhanced diffusion of the interstitial oxygen atoms. The maximum achievable concentration of the dimers is found to be limited by their dissociation rate even at temperatures of about 300°C, while in as-grown crystals the capture processes are known to be dominant in this temperature region. An explanation of this phenomenon is presented. © 2001 Published by Elsevier Science B.V.

Place, publisher, year, edition, pages
2001. Vol. 302-303, 180-187 p.
Keyword [en]
Hydrogen, Infrared absorption spectroscopy, Oxygen clustering, Silicon
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-47320DOI: 10.1016/S0921-4526(01)00425-2OAI: oai:DiVA.org:liu-47320DiVA: diva2:268216
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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