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Low temperature epitaxial growth of metal carbides using fullerenes
Department of Inorganic Chemistry, Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21, Uppsala, Sweden.
Högberg, H., Department of Inorganic Chemistry, Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21, Uppsala, Sweden.
Department of Inorganic Chemistry, Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21, Uppsala, Sweden.
Department of Inorganic Chemistry, Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21, Uppsala, Sweden.
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2001 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 142-144, 817-822 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial transition metal carbides can be deposited at low temperatures by simultaneous evaporation of C60 and either metal e-beam evaporation or metal d.c. magnetron sputtering. Hitherto, epitaxial films of TiC, VC, NbC, MoC, W2C and WC have been deposited on MgO(100), MgO(111) and in some cases 6H- and 4H-SiC(0001). Epitaxial TiC films with a good quality have been deposited at temperatures as low as 100°C with metal sputtering, while somewhat higher temperatures (> 200°C) are required for the other metals. In general, the plasma-assisted process allows lower deposition temperatures than the co-evaporation process. Most carbides can be deposited in a wide range of compositions within their homogeneity ranges by a fine-tuning of the Me/C60 flux. However, the results suggest that the formation of free surface carbon can be a limiting factor. The processes have also been used to deposit superlattices of TiC/NbC and TiC/VC at 400-500°C as well as epitaxial ternary Tix V1-xCy films. Furthermore, epitaxial films of ternary carbides with well-controlled metal concentration profiles can be deposited at temperatures below 500°C. © 2001 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2001. Vol. 142-144, 817-822 p.
Keyword [en]
C60, Epitaxy, Evaporation, Metal carbides, Sputtering
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47325DOI: 10.1016/S0257-8972(01)01111-2OAI: oai:DiVA.org:liu-47325DiVA: diva2:268221
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Hultman, LarsBirch, Jens

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