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MBE-based SiGe/Si heterojunction multilayer structures
National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, China.
National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, China.
National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, China.
National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, China.
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2001 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 227-228, 744-748 p.Conference paper, Published paper (Other academic)
Abstract [en]

In this paper, SiGe/Si multilayer heterostructures prepared by molecular beam epitaxy (MBE) are described with the aim of manufacturing SiGe heterojunction bipolar transistors (HBTs). Based on the simulations made by Medici, device structures have been designed and grown. The quality of the MBE layered structures has been characterized by reflection high-energy electron diffraction, X-ray diffraction, secondary ion mass spectrometry and spreading resistance. Furthermore, SiGe-HBTs have been fabricated. Promising DC and RF results of processed HBT devices have been obtained. © 2001 Elsevier Science B.V.

Place, publisher, year, edition, pages
2001. Vol. 227-228, 744-748 p.
Keyword [en]
A1. Doping, A1. X-ray diffraction, A2. Single crystal growth, A3. Molecular beam epitaxy, B1. Germanium silicon alloys, B2. Semiconducting silicon, B3. Bipolar transistors, B3. Heterojunction semiconductor devices
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47327DOI: 10.1016/S0022-0248(01)00819-3OAI: oai:DiVA.org:liu-47327DiVA: diva2:268223
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Ni, Wei-Xin

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