X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (=100 nm) using a low temperature growth step
2001 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 227-228, 756-760 p.Conference paper (Other academic)
Relaxation of thin SiGe layers (~90 nm) grown by molecular beam epitaxy using a low temperature growth step (120-200°C) has been investigated using two-dimensional reciprocal space mapping of X-ray diffraction. The samples studied have been divided in two groups, depending on the substrate cooling process during the growth of the low temperature layer. It has been found that a higher degree of relaxation was easily achieved for the sample group without growth interruption. A process window for full relaxation of the Si0.74Ge0.26 layer has been observed in the range of 140-150°C. © 2001 Elsevier Science B.V.
Place, publisher, year, edition, pages
2001. Vol. 227-228, 756-760 p.
A1. X-ray diffraction, A3. Molecular beam epitaxy
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47332DOI: 10.1016/S0022-0248(01)00821-1OAI: oai:DiVA.org:liu-47332DiVA: diva2:268228