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Complexes of the self-interstitial with oxygen in irradiated silicon: A new assignment of the 936 cm-1 band
Department of Physics, University of Lund, S-221 00 Lund, Sweden.
Institute of Solid State and Semiconductor Physics, 220072 Minsk, Belarus, Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, P. Brovki str. 17, 220072 Minsk, Belarus.
Institute of Solid State and Semiconductor Physics, 220072 Minsk, Belarus.
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2001 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 302-303, 188-192 p.Conference paper, Published paper (Other academic)
Abstract [en]

Three vibrational infrared absorption bands at about 936, 944 and 956 cm-1 appear commonly in spectra of Czochralski-grown silicon irradiated at low temperatures. All three bands have earlier been assigned to local vibrational modes related to oxygen in the complex of the silicon and the oxygen interstitials (IOi). However, it is shown that such an assignment of the 936 cm-1 band clearly is inconsistent with many facts and observations and that the band is most likely due to oxygen vibrations in the Si interstitial pair and interstitial oxygen complex, I2Oi. © 2001 Published by Elsevier Science B.V.

Place, publisher, year, edition, pages
2001. Vol. 302-303, 188-192 p.
Keyword [en]
Complexes, Low temperature irradiation, LVMs, Oxygen, Self-interstitial, Silicon
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-47338DOI: 10.1016/S0921-4526(01)00426-4OAI: oai:DiVA.org:liu-47338DiVA: diva2:268234
Available from: 2009-10-11 Created: 2009-10-11

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