liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Si/SiGe electron resonant tunneling diodes with graded spacer wells
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, United Kingdom.
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, United Kingdom.
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, United Kingdom.
Natl. Microlectron. Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland.
Show others and affiliations
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 78, no 26, 4184-4186 p.Article in journal (Refereed) Published
Abstract [en]

Resonant tunneling diodes have been fabricated using graded Si1 - xGex (x = 0.3?0.0) spacer wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.7Ge0.3 n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08 A/cm2 with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. © 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 78, no 26, 4184-4186 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47342DOI: 10.1063/1.1381042OAI: oai:DiVA.org:liu-47342DiVA: diva2:268238
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Zozoulenko, IgorBerggren, Karl-Fredrik

Search in DiVA

By author/editor
Zozoulenko, IgorBerggren, Karl-Fredrik
By organisation
The Institute of TechnologyDepartment of Science and TechnologyTheoretical Physics
In the same journal
Applied Physics Letters
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 85 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf