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Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Div. of Info. and Commun. Sciences, Macquarie University, Sydney, NSW 2109, Australia.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 78, no 26, 4130-4132 p.Article in journal (Refereed) Published
Abstract [en]

The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor-acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a strong intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Focused Auger electron and x-ray photoelectron spectroscopies were employed to investigate the impurity incorporation in the different regions. A preferential moderate increase of residual impurity incorporation or redistribution in mass-transport regions is suggested to be responsible for the observed change of the dominant radiative mechanism. © 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 78, no 26, 4130-4132 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47343DOI: 10.1063/1.1381421OAI: oai:DiVA.org:liu-47343DiVA: diva2:268239
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Paskova, TanjaPaskov, PlamenWahab, Qamar UlWilzén, Larsde Jong, Michel PMonemar, Bo

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Paskova, TanjaPaskov, PlamenWahab, Qamar UlWilzén, Larsde Jong, Michel PMonemar, Bo
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