Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 78, no 26, 4130-4132 p.Article in journal (Refereed) Published
The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor-acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a strong intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Focused Auger electron and x-ray photoelectron spectroscopies were employed to investigate the impurity incorporation in the different regions. A preferential moderate increase of residual impurity incorporation or redistribution in mass-transport regions is suggested to be responsible for the observed change of the dominant radiative mechanism. © 2001 American Institute of Physics.
Place, publisher, year, edition, pages
2001. Vol. 78, no 26, 4130-4132 p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47343DOI: 10.1063/1.1381421OAI: oai:DiVA.org:liu-47343DiVA: diva2:268239