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Er/O doped Si1-xGex alloy layers grown by MBE
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
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2001 (English)In: Optical materials (Amsterdam), ISSN 0925-3467, Vol. 17, no 1-2, 131-134 p.Conference paper (Other academic)
Abstract [en]

Silicon-based light emitting diodes (LEDs) containing an Er/O-doped Si1-xGex active layer have been studied. The structures were grown by molecular beam epitaxy (MBE), with Er and O concentrations of 5 × 1019 and 1 × 1020 cm-3, respectively, using Er and silicon monoxide sources. The microstructure has been studied by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy, and it is found that Er/O-doped Si0.92Ge0.08 layers of high crystalline quality, can be obtained. Electroluminescence (EL) measurements have been performed on reverse-biased Er/O doped diodes both from the surface and from the edge and the emission at 1.54 µm associated with the Er3+ ions has been studied at 300 K and lower temperatures. To evaluate the possibility to use a Si1-xGex layer for waveguiding in Si-based optoelectronics, studies of the refractive index n of strained Si1-xGex as a function of the Ge concentration have been done by spectroscopic ellipsometry in the range 0.3-1.7 µm. At 1.54 µm the refractive index increases monotonically with the Ge concentration up to n = 3.542 for a Ge concentration of 21.3%. © 2001 Elsevier Science B.V.

Place, publisher, year, edition, pages
2001. Vol. 17, no 1-2, 131-134 p.
Keyword [en]
Electroluminescence, Ellipsometry, Erbium, Refractive index, Si1 - xGex
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47358DOI: 10.1016/S0925-3467(01)00035-0OAI: diva2:268254
Available from: 2009-10-11 Created: 2009-10-11

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Du, Chun-XiaNi, Wei-XinHansson, Göran
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySurface and Semiconductor Physics
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