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Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H- and 6H-SiC
Dept. of Appl. Phys. and Phys.-Info., Keio University, Yokohama 223-8522, Japan.
2001 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 89, no 11 I, 6228-6234 p.Article in journal (Refereed) Published
Abstract [en]

Theoretical calculation of the electron Hall mobility and the Hall scattering factor in 4H- and 6H-SiC is performed based on the low-field transport model. Our mobility calculation as a function of temperature, net-doping concentration ([ND]-[NA]), and compensation ratio ([NA]/[ND]), where ND and NA are the donor (nitrogen) and acceptor concentrations, respectively, provides the theoretical values of the electron Hall mobility expected for the high quality SiC crystal. The results can be used for the evaluation of the crystalline quality of a given SiC sample. We also present the ratio of the Hall and drift mobility, i.e., the Hall scattering factor, which is needed to make a bridge between the experimentally measured Hall mobility and the theoretically calculated drift mobility using, for example, Monte Carlo simulation. Our calculations of both the electron Hall mobility and the Hall scattering factor are in very good agreement with the experimental results. © 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 89, no 11 I, 6228-6234 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-47361DOI: 10.1063/1.1366660OAI: oai:DiVA.org:liu-47361DiVA: diva2:268257
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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