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1.54 µm light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
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2001 (English)In: Optical materials (Amsterdam), ISSN 0925-3467, E-ISSN 1873-1252, Vol. 17, no 1-2, 65-69 p.Conference paper, Published paper (Other academic)
Abstract [en]

Two types of Si:Er light emitting devices have been processed and characterized with an aim to efficiently use hot electrons for impact excitation. One is a p+-SiGe/i-Si/n-Si:Er:O/n+-Si tunneling diode with a design favoring electron tunneling from the SiGe valence band to the Si conduction band and subsequent acceleration. Another type of Si:Er light emitters is based on a heterojunction bipolar transistor (HBT) structure containing an Er-doped active layer in the collector. In these devices, one can introduce hot electrons from the HBT emitter in a controlled way with a collector bias voltage prior to the avalanche breakdown to improve the impact excitation efficiency. Intense electroluminescence was observed at 300 K at low current (0.1 A cm-2) and low bias (3 V). An impact cross-section value of 1 × 10-14 cm2 has been estimated, which is a 100-fold increase compared with the values reported from any other type of Er-doped LEDs. © 2001 Elsevier Science B.V.

Place, publisher, year, edition, pages
2001. Vol. 17, no 1-2, 65-69 p.
Keyword [en]
Bipolar transistor, Diode, Electroluminescence, Er, Hot electron, Si, SiGe
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47365DOI: 10.1016/S0925-3467(01)00076-3OAI: oai:DiVA.org:liu-47365DiVA: diva2:268261
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Ni, Wei-XinDu, Chun-XiaElfving, AndersHansson, Göran

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Ni, Wei-XinDu, Chun-XiaElfving, AndersHansson, Göran
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The Institute of TechnologySurface and Semiconductor Physics Department of Physics, Chemistry and Biology
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