1.54 µm light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy
2001 (English)In: Optical materials (Amsterdam), ISSN 0925-3467, Vol. 17, no 1-2, 65-69 p.Conference paper (Other academic)
Two types of Si:Er light emitting devices have been processed and characterized with an aim to efficiently use hot electrons for impact excitation. One is a p+-SiGe/i-Si/n-Si:Er:O/n+-Si tunneling diode with a design favoring electron tunneling from the SiGe valence band to the Si conduction band and subsequent acceleration. Another type of Si:Er light emitters is based on a heterojunction bipolar transistor (HBT) structure containing an Er-doped active layer in the collector. In these devices, one can introduce hot electrons from the HBT emitter in a controlled way with a collector bias voltage prior to the avalanche breakdown to improve the impact excitation efficiency. Intense electroluminescence was observed at 300 K at low current (0.1 A cm-2) and low bias (3 V). An impact cross-section value of 1 × 10-14 cm2 has been estimated, which is a 100-fold increase compared with the values reported from any other type of Er-doped LEDs. © 2001 Elsevier Science B.V.
Place, publisher, year, edition, pages
2001. Vol. 17, no 1-2, 65-69 p.
Bipolar transistor, Diode, Electroluminescence, Er, Hot electron, Si, SiGe
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47365DOI: 10.1016/S0925-3467(01)00076-3OAI: oai:DiVA.org:liu-47365DiVA: diva2:268261