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Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Department of Electrical Engineering and Electronics, High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan.
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2001 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 82, no 1-3, 137-139 p.Article in journal (Refereed) Published
Abstract [en]

The effects of isoelectronic indium doping on optical properties of GaN layers grown by metalorganic vapor-phase epitaxy have been studied. Two sets of samples have been grown with hydrogen and with nitrogen as carrier gas. It has been shown from scanning electron microscopy, cathodoluminescence and time-resolved photoluminescence that In-doped samples have a lower dislocation density, a narrower photoluminescence line width and a longer free exciton lifetime. The improvements of structural and optical properties are attributed to the effect of In on dislocations. © 2001 Elsevier Science B.V.

Place, publisher, year, edition, pages
2001. Vol. 82, no 1-3, 137-139 p.
Keyword [en]
Indium doping, Nitrides, Recombination time, Time-resolved
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47374DOI: 10.1016/S0921-5107(00)00714-5OAI: oai:DiVA.org:liu-47374DiVA: diva2:268270
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Pozina, GaliaBergman, PederMonemar, Bo

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