Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
2001 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 82, no 1-3, 137-139 p.Article in journal (Refereed) Published
The effects of isoelectronic indium doping on optical properties of GaN layers grown by metalorganic vapor-phase epitaxy have been studied. Two sets of samples have been grown with hydrogen and with nitrogen as carrier gas. It has been shown from scanning electron microscopy, cathodoluminescence and time-resolved photoluminescence that In-doped samples have a lower dislocation density, a narrower photoluminescence line width and a longer free exciton lifetime. The improvements of structural and optical properties are attributed to the effect of In on dislocations. © 2001 Elsevier Science B.V.
Place, publisher, year, edition, pages
2001. Vol. 82, no 1-3, 137-139 p.
Indium doping, Nitrides, Recombination time, Time-resolved
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47374DOI: 10.1016/S0921-5107(00)00714-5OAI: oai:DiVA.org:liu-47374DiVA: diva2:268270