Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
2001 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 82, no 1-3, 35-38 p.Article in journal (Refereed) Published
Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect. © 2001 Elsevier Science B.V.
Place, publisher, year, edition, pages
2001. Vol. 82, no 1-3, 35-38 p.
Doping distribution, GaN, HVPE, Strain
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47375DOI: 10.1016/S0921-5107(00)00676-0OAI: oai:DiVA.org:liu-47375DiVA: diva2:268271