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Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Faculty of Physics, Sofia University, 5, J. Bourchier blvd., Sofia 1164, Bulgaria.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
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2001 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 82, no 1-3, 35-38 p.Article in journal (Refereed) Published
Abstract [en]

Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect. © 2001 Elsevier Science B.V.

Place, publisher, year, edition, pages
2001. Vol. 82, no 1-3, 35-38 p.
Keyword [en]
Doping distribution, GaN, HVPE, Strain
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47375DOI: 10.1016/S0921-5107(00)00676-0OAI: oai:DiVA.org:liu-47375DiVA: diva2:268271
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Paskova, TanjaPersson, PerPaskov, PlamenMonemar, Bo

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The Institute of TechnologyDepartment of Physics, Chemistry and BiologyThin Film PhysicsMaterials Science
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