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Optical properties of GaNAs/GaAs structures
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
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2001 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 82, no 1-3, 143-147 p.Article in journal (Refereed) Published
Abstract [en]

We review our recent results on optical characterization of MBE-grown GaNAs/GaAs quantum structures with N content up to 4.5%, by employing photoluminescence (PL), PL excitation, and time-resolved PL spectroscopies. The dominant PL mechanism has been determined as recombination of excitons trapped by potential fluctuations of the band edge, due to composition disorder and strain nonuniformity of the alloy. The estimated value of the localization potential is around 60 meV for the low-temperature grown structures and can be reduced by increasing the growth temperature or using post-growth rapid thermal annealing (RTA). © 2001 Elsevier Science S.A.

Place, publisher, year, edition, pages
2001. Vol. 82, no 1-3, 143-147 p.
Keyword [en]
Defect, Disorder, GaNAs, Localization, Photoluminescence, Recombination
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47376DOI: 10.1016/S0921-5107(00)00669-3OAI: oai:DiVA.org:liu-47376DiVA: diva2:268272
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Buyanova, Irina A.Chen, WeiminPozina, GaliaMonemar, Bo

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