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Nature and occurrence of defects in 6H-SiC Lely crystals
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, 02015 HUT, Finland.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2001 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 225, no 1, 23-33 p.Article in journal (Refereed) Published
Abstract [en]

Synchrotron white beam topography has been applied to study defects in 6H-SiC platelets grown by the Lely method. In addition, high resolution X-ray diffraction, chemical etching, capacitance-voltage and photoluminescence measurements were carried out to confirm and complement the topography results. The occurrence of structural defects such as various misorientations, dislocations, stacking faults and precipitates are classified into grown-in and post-growth defects. The results are related to the assumed growth process of the differently shaped platelets. © 2001 Published by Elsevier Science B.V.

Place, publisher, year, edition, pages
2001. Vol. 225, no 1, 23-33 p.
Keyword [en]
A1. High resolution X-ray diffraction, A1. Line defects, A1. Planar defects, A1. X-ray topography, A2. Growth from vapor, B2. Semiconductor silicon compounds
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47397DOI: 10.1016/S0022-0248(01)01025-9OAI: diva2:268293
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Yakimova, RositsaJanzén, Erik
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ReferencesLink to record
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