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The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs
Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden.
Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden.
Department of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden, Department of Solid State Electronics, Kungl. Tekniska Högskolan (KTH), Electrum, S-164 40 Kista, Sweden.
Department of Solid State Electronics, Kungl. Tekniska Högskolan (KTH), Electrum, S-164 40 Kista, Sweden.
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2001 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 45, no 5, 645-653 p.Article in journal (Refereed) Published
Abstract [en]

A full band Monte Carlo (MC) study of the high frequency performance of a 4H-SiC short channel vertical MESFET is presented. The MC model used is based on data from a full potential band structure calculation using the local density approximation to the density functional theory. The MC results have been compared with simulations using state of the art drift-diffusion and hydrodynamic transport models. Transport parameters such as mobility, saturation velocity and energy relaxation time are extracted from MC simulations. © 2001 Elsevier Science Ltd.

Place, publisher, year, edition, pages
2001. Vol. 45, no 5, 645-653 p.
Keyword [en]
Device simulations, SiC, Vertical MESFETs
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-47400DOI: 10.1016/S0038-1101(01)00127-7OAI: oai:DiVA.org:liu-47400DiVA: diva2:268296
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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