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Ordinary and extraordinary dielectric functions of 4H- and 6H-SiC from 3.5 to 9.0 eV
Linköping University, The Institute of Technology.ORCID iD: 0000-0003-2749-8008
Sentech Instruments GmbH, Carl-Scheele-Str. 16, 12489 Berlin, Germany.
Inst. für Festkörperphysik, Sekr. PN6-1, Technische Universität Berlin, 10623 Berlin, Germany.
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 78, no 18, 2715-2717 p.Article in journal (Refereed) Published
Abstract [en]

We report ordinary (??c axis) and extraordinary (??c axis) dielectric function data of 4H- and 6H-SiC from 3.5 to 9.0 eV. These data, which were obtained by with spectroscopic ellipsometry, are also compared to recently reported ab initio calculations. Critical point energies were found using real and reciprocal space analysis. © 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 78, no 18, 2715-2717 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47404DOI: 10.1063/1.1369617OAI: diva2:268300
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Järrendahl, KennethHenry, Anne
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