Surface damage formation during ion-beam thinning of samples for transmission electron microscopy
2001 (English)In: Ultramicroscopy, ISSN 0304-3991, Vol. 87, no 3, 97-104 p.Article in journal (Refereed) Published
All techniques employed in the preparation of samples for transmission electron microscopy (TEM) introduce or include artifacts that can degrade the images of the materials being studied. One significant cause of this image degradation is surface amorphization. The damaged top and bottom surface layers of TEM samples can obscure subtle detail, particularly at high magnification. Of the techniques typically used for TEM sample preparation of semiconducting materials, cleaving produces samples with the least surface amorphization, followed by low-angle ion milling, conventional ion milling, and focused ion beam (FIB) preparation. In this work, we present direct measurements of surface damage on silicon produced during TEM sample preparation utilizing these techniques. The thinnest damaged layer formed on a silicon surface was measured as 1.5nm thick, while an optimized FIB sample preparation process results in the formation of a 22nm thick damaged layer. Lattice images are obtainable from all samples. Copyright © 2001 Elsevier Science B.V.
Place, publisher, year, edition, pages
2001. Vol. 87, no 3, 97-104 p.
Cleaving, Focused ion beam, Ion milling, TEM sample preparation
IdentifiersURN: urn:nbn:se:liu:diva-47405DOI: 10.1016/S0304-3991(00)00096-6OAI: oai:DiVA.org:liu-47405DiVA: diva2:268301