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Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics .
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 15, 2104-2106 p.Article in journal (Refereed) Published
Abstract [en]

The temperature dependencies of the current-voltage characteristics and the electroluminescence (EL) intensity of molecular beam epitaxy grown Er/O-doped Si light emitting diodes at reverse bias have been studied. To minimize the scattering of electrons injected from the p-doped Si1-xGex electron emitters, an intrinsic Si layer was used in the depletion region. For many diodes, there is a temperature range where the EL intensity increases with temperature. Data are reported for a structure that shows increasing intensity up to 100°C. This is attributed to an increasing fraction of the pumping current being due to phonon-assisted tunneling, which gives a higher saturation intensity, compared to ionization-dominated breakdown at lower temperatures. © 2001 American Institute of Physics.

Place, publisher, year, edition, pages
2001. Vol. 78, no 15, 2104-2106 p.
National Category
Engineering and Technology
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URN: urn:nbn:se:liu:diva-47416DOI: 10.1063/1.1359781OAI: oai:DiVA.org:liu-47416DiVA: diva2:268312
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Hansson, GöranNi, Wei-XinDu, Chun-XiaElfving, Anders

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