Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 78, no 15, 2104-2106 p.Article in journal (Refereed) Published
The temperature dependencies of the current-voltage characteristics and the electroluminescence (EL) intensity of molecular beam epitaxy grown Er/O-doped Si light emitting diodes at reverse bias have been studied. To minimize the scattering of electrons injected from the p-doped Si1-xGex electron emitters, an intrinsic Si layer was used in the depletion region. For many diodes, there is a temperature range where the EL intensity increases with temperature. Data are reported for a structure that shows increasing intensity up to 100°C. This is attributed to an increasing fraction of the pumping current being due to phonon-assisted tunneling, which gives a higher saturation intensity, compared to ionization-dominated breakdown at lower temperatures. © 2001 American Institute of Physics.
Place, publisher, year, edition, pages
2001. Vol. 78, no 15, 2104-2106 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47416DOI: 10.1063/1.1359781OAI: oai:DiVA.org:liu-47416DiVA: diva2:268312