High performance Si/Si1-x Gex resonant tunneling diodes
2001 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, Vol. 22, no 4, 182-184 p.Article in journal (Refereed) Published
Resonant tunneling diodes (RTDs) with strained i-Si0.4 Ge06. potential barriers and a strained i-Si quantum well, all on a relaxed Si0.8 Ge0.2 virtual substrate were successfully grown by ultra high vacuum compatible chemical vapor deposition and fabricated using standard Si processing methods. A large peak to valley current ratio of 2.9 and a peak current density of 4.3 kA/cm2 at room temperature were recorded from pulsed and continuous dc current-voltage measurements, the highest reported values to date for Si/Si1-x Gex RTDs. These dc figures of merit and material system render such structures suitable and highly compatible with present high speed and low power Si/Si1-x Gex heterojunction field effect transistor based integrated circuits.
Place, publisher, year, edition, pages
2001. Vol. 22, no 4, 182-184 p.
Germanium, Resonant tunneling diodes, Silicon, Strain
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47426DOI: 10.1109/55.915607OAI: oai:DiVA.org:liu-47426DiVA: diva2:268322