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High performance Si/Si1-x Gex resonant tunneling diodes
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom.
IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom.
Holländer, B., IEEE, Institut für Schicht und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany.
IEEE, Institut für Schicht und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany.
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2001 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, Vol. 22, no 4, 182-184 p.Article in journal (Refereed) Published
Abstract [en]

Resonant tunneling diodes (RTDs) with strained i-Si0.4 Ge06. potential barriers and a strained i-Si quantum well, all on a relaxed Si0.8 Ge0.2 virtual substrate were successfully grown by ultra high vacuum compatible chemical vapor deposition and fabricated using standard Si processing methods. A large peak to valley current ratio of 2.9 and a peak current density of 4.3 kA/cm2 at room temperature were recorded from pulsed and continuous dc current-voltage measurements, the highest reported values to date for Si/Si1-x Gex RTDs. These dc figures of merit and material system render such structures suitable and highly compatible with present high speed and low power Si/Si1-x Gex heterojunction field effect transistor based integrated circuits.

Place, publisher, year, edition, pages
2001. Vol. 22, no 4, 182-184 p.
Keyword [en]
Germanium, Resonant tunneling diodes, Silicon, Strain
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47426DOI: 10.1109/55.915607OAI: oai:DiVA.org:liu-47426DiVA: diva2:268322
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Zozoulenko, IgorBerggren, Karl-Fredrik

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