Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGex Schottky contacts prepared by co-sputtering and thermal reaction
2001 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, Vol. 16, no 4, 255-259 p.Article in journal (Refereed) Published
The noise properties of Pt/p-Si1-xGex and PtSi/p-Si1-xGex (x = 0.14) Schottky contacts have been studied. The silicide layer PtSi was formed by thermal reaction (TR) of Pt with a silicon substrate and by co-sputtering (CS) of Pt and Si onto the strained Si1-xGex layer. The noise measurements were performed at temperature T = 77 K over the frequency range 10-104 Hz. Higher noise level was observed in the annealed diode Pt/p-Si1-xGex. In both diodes, the noise was found to exhibit 1/f behaviour and was attributed to fluctuations of the generation-recombination current at the interface states. The results reveal significant reductions in the total noise by 70%, and the interface state density Nit by three orders of magnitude when the silicide is formed by the CS process.
Place, publisher, year, edition, pages
2001. Vol. 16, no 4, 255-259 p.
IdentifiersURN: urn:nbn:se:liu:diva-47427DOI: 10.1088/0268-1242/16/4/312OAI: oai:DiVA.org:liu-47427DiVA: diva2:268323