2001 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 78, no 12, 1697-1699 p.Article in journal (Refereed) Published
Si/SiGe/Si:Er:O heterojunction bipolar transistor (HBT) type light-emitting devices with Er3+ ions incorporated in the collector region have been fabricated using a layered structure grown by differential molecular-beam epitaxy. Electroluminescence measurements on processed light-emitting HBTs can be performed in either constant driving current mode or constant applied bias mode, which is an important advantage over conventional Si:Er light-emitting diodes. Intense room-temperature light emission at the Er3+ characteristic wavelength of 1.54 µm has been observed at low driving current density, e.g., 0.1 A cm-2, and low applied bias, e.g., 3 V, across the collector and emitter. © 2001 American Institute of Physics.
Place, publisher, year, edition, pages
2001. Vol. 78, no 12, 1697-1699 p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47435DOI: 10.1063/1.1356732OAI: oai:DiVA.org:liu-47435DiVA: diva2:268331