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High energy photoemission investigations of SiO2/SiC samples
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
II. Inst. Exp. Phys., Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.
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2001 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 172, no 3-4, 253-259 p.Article in journal (Refereed) Published
Abstract [en]

Chemically etched and directly load-locked SiO2/SiC samples are investigated using a photon energy of 3.0 keV. Si 2p and C 1s spectra recorded at different electron emission angles each show two components originating from SiC, SiO2 and graphite like carbon, respectively. The relative intensity of these are extracted and compared to calculated intensity variations. For the samples investigated, best agreement between experimental and calculated intensity variations is obtained when assuming a graphite like layer on top of the oxide. No graphite like carbon at the SiO2/SiC interface was detected, even on a sample for which the graphite like carbon contribution at the surface corresponds to a layer thickness of only 0.05 angstrom. The energy separation between the oxide and carbide components in the Si 2p spectrum was monitored before and after Ar+ sputtering cycles and before and after in situ heating. The separation increased directly upon sputtering while only in situ heating does not affect it. We suggest that defects induced by the sputtering give rise to the increase, observed in the energy separation.

Place, publisher, year, edition, pages
2001. Vol. 172, no 3-4, 253-259 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47447DOI: 10.1016/S0169-4332(00)00858-8OAI: oai:DiVA.org:liu-47447DiVA: diva2:268343
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Virojanadara, ChariyaJohansson, Leif

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