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Stress related morphological defects in SiC epitaxial layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2001 (English)In: Diam. Relat. Mater., Vol. 10, 2001, Vol. 10, no 3-7, 1246-1250 p.Conference paper, Published paper (Refereed)
Abstract [en]

Morphological defects have been studied on thick 4H-SiC layers being grown with high growth rate (100 µm/h) by sublimation epitaxy. While the surface morphology of such layers is generally specular and featureless, extended defects are observed to emanate from some obstacles. The length of the defects can vary between 60 and 950 µm and the defect can occur at different stages of growth. Evidence shows that these defects occur due to localised stress present during the epitaxial growth. The causes for the defects can be greatly reduced by improving the structural quality of the substrate material. © 2001 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
2001. Vol. 10, no 3-7, 1246-1250 p.
Keyword [en]
4H-SiC, Morphological defect, Stress, Thick layers
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47461DOI: 10.1016/S0925-9635(00)00385-XOAI: oai:DiVA.org:liu-47461DiVA: diva2:268357
Conference
Diamond and Related Materials
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2013-02-06

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Yakimova, RositsaSyväjärvi, MikaelKakanakova-Georgieva, AneliaJanzén, Erik

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