Stress related morphological defects in SiC epitaxial layers
2001 (English)In: Diam. Relat. Mater., Vol. 10, 2001, Vol. 10, no 3-7, 1246-1250 p.Conference paper (Refereed)
Morphological defects have been studied on thick 4H-SiC layers being grown with high growth rate (100 µm/h) by sublimation epitaxy. While the surface morphology of such layers is generally specular and featureless, extended defects are observed to emanate from some obstacles. The length of the defects can vary between 60 and 950 µm and the defect can occur at different stages of growth. Evidence shows that these defects occur due to localised stress present during the epitaxial growth. The causes for the defects can be greatly reduced by improving the structural quality of the substrate material. © 2001 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
2001. Vol. 10, no 3-7, 1246-1250 p.
4H-SiC, Morphological defect, Stress, Thick layers
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47461DOI: 10.1016/S0925-9635(00)00385-XOAI: oai:DiVA.org:liu-47461DiVA: diva2:268357
Diamond and Related Materials