Letter: Interfacial investigation of in situ oxidation of 4H-SiC
2001 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 472, no 1-2Article in journal, Letter (Other academic) Published
An in situ oxidation study of v3 × v3 R30° reconstructed 4H-SiC(001) surfaces is reported. An intermediate oxidation state (interpreted to be Si+1) is revealed in core level photoemission spectra recorded from the in situ prepared SiO2/4H-SiC samples. Oxidation was made at a pressure of ~10-3 Torr in flowing oxygen and at substrate temperatures from 600°C to 950°C. The highest oxidation rate was obtained at 800°C when ˜25 Å thick SiO2 layers were prepared. The surface related C 1s components observed on the clean reconstructed 4H-SiC(0001) surfaces were found to disappear after oxidation. No carbon or carbon containing by-product at the interface or in the oxide were possible to observe for the films grown.
Place, publisher, year, edition, pages
2001. Vol. 472, no 1-2
Oxidation, Semi-conductor-insulator interfaces, Silicon carbide, Silicon oxides
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47478DOI: 10.1016/S0039-6028(00)00967-5OAI: oai:DiVA.org:liu-47478DiVA: diva2:268374