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Letter: Interfacial investigation of in situ oxidation of 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
2001 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 472, no 1-2Article in journal, Letter (Other academic) Published
Abstract [en]

An in situ oxidation study of v3 × v3 R30° reconstructed 4H-SiC(001) surfaces is reported. An intermediate oxidation state (interpreted to be Si+1) is revealed in core level photoemission spectra recorded from the in situ prepared SiO2/4H-SiC samples. Oxidation was made at a pressure of ~10-3 Torr in flowing oxygen and at substrate temperatures from 600°C to 950°C. The highest oxidation rate was obtained at 800°C when ˜25 Å thick SiO2 layers were prepared. The surface related C 1s components observed on the clean reconstructed 4H-SiC(0001) surfaces were found to disappear after oxidation. No carbon or carbon containing by-product at the interface or in the oxide were possible to observe for the films grown.

Place, publisher, year, edition, pages
2001. Vol. 472, no 1-2
Keyword [en]
Oxidation, Semi-conductor-insulator interfaces, Silicon carbide, Silicon oxides
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47478DOI: 10.1016/S0039-6028(00)00967-5OAI: oai:DiVA.org:liu-47478DiVA: diva2:268374
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Virojanadara, ChariyaJohansson, Leif

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