Pseudodonor nature of the D1 defect in 4H-SiC
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 78, no 1, 46-48 p.Article in journal (Refereed) Published
We use the recent findings about the pseudodonor character of the D1 defect to establish an energy-level scheme in the band gap for the defect, predicting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the D1 defect indeed is correlated to such a hole trap. In addition, we show that the D1 defect is not correlated to the Z1/2 electron trap, in contrast to what was previously reported. © 2001 American Institute of Physics.
Place, publisher, year, edition, pages
2001. Vol. 78, no 1, 46-48 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47486DOI: 10.1063/1.1334907OAI: oai:DiVA.org:liu-47486DiVA: diva2:268382