Core level and valence band photoemission study of the (1 1 1) and (1¯ 1¯ 1¯) surfaces of 3C-SiC
2001 (English)In: Surface Science, ISSN 0039-6028, Vol. 470, no 3, 284-292 p.Article in journal (Refereed) Published
A core level and valence band photoemission study of thick 3C-SiC(1 1 1) and 3C-SiC(1¯ 1¯ 1¯) epilayers grown by sublimation epitaxy is reported. The as introduced samples show threefold 1×1 low-energy electron diffraction patterns. For the Si face v3 and 6v3 reconstructed surfaces develop after in situ heating to 1100 °C and 1300 °C, respectively. For the C face a 3×3 reconstruction form after heating to 980 °C. A semiconducting behavior is observed for the v3 and 3×3 reconstructed surfaces while the 6v3 reconstruction show a Fermi edge and thus a metallic-like behavior. The surface state on the v3 surface is investigated and found to have ?1 symmetry and a total band width of 0.10 eV within the first surface Brillouin zone. For the Si2p and C 1s core levels binding energies and surface shifted components are extracted and compared to earlier reported results for 6H- and 4H-SiC.
Place, publisher, year, edition, pages
2001. Vol. 470, no 3, 284-292 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47491DOI: 10.1016/S0039-6028(00)00869-4OAI: oai:DiVA.org:liu-47491DiVA: diva2:268387