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Thermally isolated MOSFET for gas sending application
Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
Van Der Schoot, B., Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
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2001 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 22, no 1, 11-13 p.Article in journal (Refereed) Published
Abstract [en]

This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining of silicon. The thermal efficiency of the device is 2°C/mW with a thermal constant less than 100 ms. Holes are made in the passivation film over the gates of the MOSFET and gas sensitive films deposited on top of the gate insulator. The low thermal mass device realized allows new modes of operation for MOSFET gas sensors such as a combination of the field and thermal effects and a pulsed temperature mode of operation.

Place, publisher, year, edition, pages
2001. Vol. 22, no 1, 11-13 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47493DOI: 10.1109/55.892428OAI: oai:DiVA.org:liu-47493DiVA: diva2:268389
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Sundgren, HansLundström, Ingemar

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