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Computational modeling of SiC epitaxial growth in a hot wall reactor
ABB Corporate Research, S-721 78 Västerås, Sweden.
ABB Corporate Research, S-721 78 Västerås, Sweden, Faxén Laboratory, Royal Institute of Technology, S-100 44 Stockholm, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
ABB Corporate Research, S-721 78 Västerås, Sweden.
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2000 (English)In: Journal of Crystal Growth, ISSN 0022-0248, Vol. 220, no 4, 560-571 p.Article in journal (Refereed) Published
Abstract [en]

A computational model for chemical vapor deposition (CVD) of silicon carbide (SiC) in a hot-wall reactor is developed, where the susceptor is tapered with a rectangular cross-section. The present work focuses on the advection-diffusion-reaction process in the susceptor. The precursors are propane and silane, and the carrier gas is hydrogen with mass fraction higher than 99%. Computed growth rates under different system pressures and precursor concentrations are compared to the experimental data measured on samples grown in the Linkoping CVD reactor. The gas composition distribution in the susceptor and the growth rate profile on the susceptor floor are shown and analyzed. Dependence of the growth rate on precursor concentrations is investigated. It is demonstrated that the growth rate of SiC may either be carbon transport limited or silicon controlled, depending on the input carbon-to-silicon ratio.

Place, publisher, year, edition, pages
2000. Vol. 220, no 4, 560-571 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47520DOI: 10.1016/S0022-0248(00)00843-5OAI: diva2:268416
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-14

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Hallin, Christer
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The Institute of TechnologyDepartment of Physics, Chemistry and Biology
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