Band-gap shift of the heavily doped single- and double-donor systems Si: Bi and Si
2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 62, no 19, 12882-12887 p.Article in journal (Refereed) Published
The band-gap shift of the heavily single and double-donor doped systems Si:Bi and Si:P,Bi, prepared by ion implantation, was investigated theoretically and experimentally at room temperature. The calculations were carried out within a framework of the random-phase approximation and the temperature and different many-body effects were taken into account. The experimental data were obtained with photoconductivity measurements. Theoretical and experimental results fall closely together in a wide range of donor concentration.
Place, publisher, year, edition, pages
2000. Vol. 62, no 19, 12882-12887 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47540DOI: 10.1103/PhysRevB.62.12882OAI: oai:DiVA.org:liu-47540DiVA: diva2:268436