High temperature catalytic metal field effect transistor for industrial applications
2000 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, Vol. 70, no 1-3, 67-76 p.Article in journal (Refereed) Published
Field effect chemical sensors, utilising silicon carbide as semiconductor, can be operated at high temperature and in rough environments. Gas sensitive field effect transistors, MISiCFET, are now developed (ACREO, Kista in Sweden). This will increase the number of possible applications for field effect gas sensors. The first batch of MISiCFET devices is possible to operate in intermittent pulses of hydrogen/oxygen up to 775°C. At temperature above 600°C, the gas response of the MISiC devices has very short time constants for a change between oxidising and reducing atmosphere and cylinder specific monitoring of a combustion engine has been demonstrated. Other industrial applications, like exhaust diagnosis and flue gas monitoring, have been demonstrated by the use of MISiC Schottky diodes at lower temperatures, 200°C-500°C.
Place, publisher, year, edition, pages
2000. Vol. 70, no 1-3, 67-76 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47556DOI: 10.1016/S0925-4005(00)00559-1OAI: oai:DiVA.org:liu-47556DiVA: diva2:268452