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Strain relaxation of low-temperature deposited epitaxial titanium-carbide films
Högberg, H., Department of Inorganic Chemistry, Angstrom Lab., Uppsala Univ., P.O., Uppsala, Sweden.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Department of Inorganic Chemistry, Angstrom Lab., Uppsala Univ., P.O., Uppsala, Sweden.
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2000 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 219, no 3, 237-244 p.Article in journal (Refereed) Published
Abstract [en]

The lattice misfit strain and relaxation during growth of 60-950 angstroms epitaxial TiC carbide films deposited by co-evaporation of C60 and Ti on MgO(0 0 1) have been studied by reciprocal space mapping (RSM) and transmission electron microscopy (TEM). All the films exhibited a strained layer growth behavior with respect to the substrate. The strain e, ranged from 2.1% for the 60 angstroms film to 0.8% for the 950 angstroms film. Initial misfit strain relaxation was by slip on {1 1 0}<1 0 1¯> and {1 1 1}<1 0 1¯>. After dislocation rearrangement the films predominantly exhibited well-developed misfit dislocations of edge type with line direction <1 0 0> along the interface plane and Burgers vectors 1/2[1 0 1¯] inclined to the interface with MgO.

Place, publisher, year, edition, pages
2000. Vol. 219, no 3, 237-244 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47568DOI: 10.1016/S0022-0248(00)00628-XOAI: oai:DiVA.org:liu-47568DiVA: diva2:268464
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Birch, JensHultman, Lars

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