liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Show others and affiliations
2000 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, Vol. 3, no 5-6, 523-528 p.Article in journal (Refereed) Published
Abstract [en]

Er and O co-doped Si structures have been prepared using molecular-beam epitaxy (MBE) with fluxes of Er and O obtained from Er and silicon monoxide (SiO) evaporation in high-temperature cells. The incorporation of Er and O has been studied for concentrations of up to 2×1020 and 1×1021 cm-3, respectively. Surface segregation of Er can take place, but with O co-doping the segregation is suppressed and Er-doped layers without any indication of surface segregation can be prepared. Si1-xGex and Si1-yCy layers doped with Er/O during growth at different substrate temperatures show more defects than corresponding Si layers. Strong emission at 1.54µm associated with the intra-4f transition of Er3+ ions is observed in electroluminescence (EL) at room temperature in reverse-biased p-i-n-junctions. To optimize the EL intensity we have varied the Er/O ratio and the temperature during growth of the Er/O-doped layer. Using an Er-concentration of around 1×1020 cm-3 we find that Er/O ratios of 1:2 or 1:4 give higher intensity than 1:1 while the stability with respect to breakdown is reduced for the highest used O concentrations. For increasing growth temperatures in the range 400-575 °C there is an increase in the EL intensity. A positive effect of post-annealing on the photoluminescence intensity has also been observed.

Place, publisher, year, edition, pages
2000. Vol. 3, no 5-6, 523-528 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47578DOI: 10.1016/S1369-8001(00)00075-5OAI: diva2:268474
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-22

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Du, Chun-XiaPersson, PerHultman, LarsPozina, GaliaNi, Wei-XinHansson, Göran
By organisation
The Institute of TechnologyDepartment of Physics, Chemistry and BiologyThin Film PhysicsMaterials Science Surface and Semiconductor Physics
In the same journal
Materials Science in Semiconductor Processing
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 12 hits
ReferencesLink to record
Permanent link

Direct link