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Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Materials Department, University of California, Santa Barbara, California, USA.
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 62, no 11, 7344-7349 p.Article in journal (Refereed) Published
Abstract [en]

We present magnetoluminescence measurements of InAs/GaAs self-assembled quantum dots (QD's) at different excitation intensities. By applying high excitation intensities, the magnetic field evolution of the excited-state emission of QD's is revealed. A splitting of the states with a nonzero magnetic momentum is observed and the in-plane reduced electron-hole mass is determined. The experimental value is found to be in a good agreement with the theoretical predictions based on the eight-band k·p model including both strain effect and band nonparabolicity. The density dependence of the diamagnetic shift of the ground-state emission is also studied providing evidence for screening of the Coulomb interaction in QD's.

Place, publisher, year, edition, pages
2000. Vol. 62, no 11, 7344-7349 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47582DOI: 10.1103/PhysRevB.62.7344OAI: oai:DiVA.org:liu-47582DiVA: diva2:268478
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Paskov, PlamenHoltz, Per-OlofMonemar, Bo

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