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Electronic structure of Sn/Si(111) √3×√3: Indications of a low-temperature phase
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Maxlab, Lund University, Lund, Sweden.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 62, no 12, 8082-8086 p.Article in journal (Refereed) Published
Abstract [en]

The Sn/Si(111) √3×√3 surface has been studied by photoelectron spectroscopy, low-energy electron diffraction (LEED), and scanning tunneling microscopy. Unlike Sn/Ge(111), the Sn/Si(111) surface shows a √3×√3 LEED pattern at low temperature also (70 K). The electronic structure, however, is inconsistent with a pure √3×√3 phase. Sn 4d spectra exhibit two major components and the valence band shows two surface bands. These features have been associated with the low-temperature 3×3 phase in the case of Sn/Ge(111). The similarity in the electronic structure points to stabilization of a low-temperature phase for Sn/Si(111) also, but at a significantly lower temperature (<70 K).

Place, publisher, year, edition, pages
2000. Vol. 62, no 12, 8082-8086 p.
National Category
Engineering and Technology
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URN: urn:nbn:se:liu:diva-47583DOI: 10.1103/PhysRevB.62.8082ISI: 000089593400060OAI: oai:DiVA.org:liu-47583DiVA: diva2:268479
Available from: 2013-03-27 Created: 2009-10-11 Last updated: 2013-03-27Bibliographically approved

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Uhrberg, RogerZhang, HanminHansson, Göran

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Surface and Semiconductor PhysicsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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