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Retardation-enhanced van der Waals force between thin metal films
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-6281-868X
2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 62, no 11, 7523-7526 p.Article in journal (Refereed) Published
Abstract [en]

We recently investigated the van der Waals force between thin metal films. Under certain conditions this force decrease with separation to a fractional power. In the present work we use optical data of metals and the zero-temperature Lifshitz formalism to demonstrate a retardation effect. The retarded attraction between thin metal films may be larger than the nonretarded attraction. This property is related to a comparatively weak retardation dependence of the energy that originates from the transverse magnetic modes. At separations where the transverse electric modes give a significant contribution, the net effect can actually be an increased attraction. This effect vanishes with increasing film thickness and with increasing dissipation.

Place, publisher, year, edition, pages
2000. Vol. 62, no 11, 7523-7526 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47585DOI: 10.1103/PhysRevB.62.7523OAI: oai:DiVA.org:liu-47585DiVA: diva2:268481
Note
Original Publication: Mathias Boström and Bo Sernelius, Retardation-enhanced van der Waals force between thin metal films, 2000, Physical Review B Condensed Matter, (62), 11, 7523-7526. http://dx.doi.org/10.1103/PhysRevB.62.7523 Copyright: American Physical Society http://www.aps.org/Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Boström, MathiasSernelius, Bo

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