Low-power micromachined MOSFET gas sensor
2000 (English)In: Journal of microelectromechanical systems, ISSN 1057-7157, Vol. 9, no 3, 303-308 p.Article in journal (Refereed) Published
This paper reports on the design, fabrication, and characterization of the first low-power consumption MOSFET gas sensor. The novel MOSFET array gas sensor has been fabricated using anisotropic bulk silicon micromachining. A heating resistor, a diode used as temperature sensor, and four MOSFETs are located in a silicon island suspended by a dielectric membrane. The membrane has a low thermal conductivity coefficient and, therefore, thermally isolates the electronic components from the chip frame. This low thermal mass device allows the reduction of the power consumption to a value of 90 mW for an array of four MOSFETs at an operating temperature of 170 °C. Three of the MOSFETs have their gate covered with thin catalytic metals and are used as gas sensors. The fourth one has a standard gate covered with nitride and could act as a reference. The sensor was tested under different gaseous atmospheres and has shown good gas sensitivities to hydrogen and ammonia. The low-power MOSFET array gas sensor presented is suitable for applications in portable gas sensor instruments, electronic noses, and automobiles.
Place, publisher, year, edition, pages
2000. Vol. 9, no 3, 303-308 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47591DOI: 10.1109/84.870055OAI: oai:DiVA.org:liu-47591DiVA: diva2:268487