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Low-power micromachined MOSFET gas sensor
Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland, Actuators and Microsystems Lab., Institute of Microtechnology, Neuchâtel, Switzerland.
Van Der Schoot, B., Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland.
De Rooij, N.F., Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland, Research and Development Department, Cordis Europa N.V., Roden, Netherlands, Institute of Microtechnology, University of Neuchâtel, Neuchâtel, Switzerland.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
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2000 (English)In: Journal of microelectromechanical systems, ISSN 1057-7157, Vol. 9, no 3, 303-308 p.Article in journal (Refereed) Published
Abstract [en]

This paper reports on the design, fabrication, and characterization of the first low-power consumption MOSFET gas sensor. The novel MOSFET array gas sensor has been fabricated using anisotropic bulk silicon micromachining. A heating resistor, a diode used as temperature sensor, and four MOSFETs are located in a silicon island suspended by a dielectric membrane. The membrane has a low thermal conductivity coefficient and, therefore, thermally isolates the electronic components from the chip frame. This low thermal mass device allows the reduction of the power consumption to a value of 90 mW for an array of four MOSFETs at an operating temperature of 170 °C. Three of the MOSFETs have their gate covered with thin catalytic metals and are used as gas sensors. The fourth one has a standard gate covered with nitride and could act as a reference. The sensor was tested under different gaseous atmospheres and has shown good gas sensitivities to hydrogen and ammonia. The low-power MOSFET array gas sensor presented is suitable for applications in portable gas sensor instruments, electronic noses, and automobiles.

Place, publisher, year, edition, pages
2000. Vol. 9, no 3, 303-308 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47591DOI: 10.1109/84.870055OAI: oai:DiVA.org:liu-47591DiVA: diva2:268487
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-14

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Sundgren, HansLundström, Ingemar

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