liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effect of non-abrupt interfaces in AlAs/GaAs superlattices with embedded GaAs quantum wells
Faculty of Physics, Sofia Univ., 5 James Bourchier B., Sofia, Bulgaria.
Faculty of Physics, Sofia Univ., 5 James Bourchier B., Sofia, Bulgaria.
Faculty of Physics, Sofia Univ., 5 James Bourchier B., Sofia, Bulgaria.
Escuela de Física, Univ. Auton. Zacatecas, 98068 Z., ZAC, Mexico.
Show others and affiliations
2000 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 58, no 2, 561-567 p.Article in journal (Refereed) Published
Abstract [en]

In the present paper, we investigate the effect of the non-abrupt interfaces on the electronic and optical properties of short-period AlAs/GaAs superlattices with embedded GaAs quantum wells. The lateral disorder and the component interdiffusion at the interfaces are averaged over the layer planes and are effectively represented by a diffusion concentration profile in the growth direction. The diffusion length LD is used as a parameter characterizing the degree of interface broadening. The electronic structure calculations are made using the sp3s* spin-dependent empirical tight-binding Hamiltonian, the virtual crystal approximation, and the surface Green function matching method. The dependencies of the lowest electron (E1), heavy hole (HH1), and light hole (LH1) bound states on the diffusion length are calculated for LD from 0 to 4 monolayers. It is found that the energies of the transitions (E1-HH1) and (E1-LH1) increase as LD increases. The results obtained are compared with photoluminescence data for MBE-grown samples. It is found that the degree of interface broadening depends on the growth temperature and on the sample geometry. The diffusion lengths calculated from the experimental data follow the expected trends, revealing a good qualitative agreement between theory and experiment.

Place, publisher, year, edition, pages
2000. Vol. 58, no 2, 561-567 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47608DOI: 10.1016/S0042-207X(00)00233-5OAI: oai:DiVA.org:liu-47608DiVA: diva2:268504
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Ivanov, Ivan Gueorguiev

Search in DiVA

By author/editor
Ivanov, Ivan Gueorguiev
By organisation
The Institute of TechnologyMaterials Science
In the same journal
Vacuum
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 73 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf