Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals
2000 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, Vol. 147, no 7, 2744-2748 p.Article in journal (Refereed) Published
An electrochemical etching process is used for evaluating the types and the distribution of crystal defects on both the Si and C faces of p-type 6H and 4H-SiC. The surface morphology of the etched area is different for the two surface polarities. Dislocation-related etch-pits appeared on the etched surfaces due to a preferential etching process. The etching experiments were conducted in a commercial apparatus in combination with accurate capacitance-voltage profiling, showing that this characterization method is highly useful and simple for evaluating SiC material quality.
Place, publisher, year, edition, pages
2000. Vol. 147, no 7, 2744-2748 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47628DOI: 10.1149/1.1393599OAI: oai:DiVA.org:liu-47628DiVA: diva2:268524