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Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices
Ioffe Phys.-Tech. Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation.
Ioffe Phys.-Tech. Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation.
Ioffe Phys.-Tech. Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation.
Ioffe Phys.-Tech. Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation.
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2000 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 214, 806-809 p.Article in journal (Refereed) Published
Abstract [en]

The dynamics properties of hot excitons near the effective excitonic mobility edge are investigated in a CdSe/ZnSe superlattice structure where thermalized luminescence of localized excitons is strongly suppressed due to tunneling towards the attached deeper ZnCdSe quantum well. Time-resolved selective-excitation luminescence measurements reveal a rather complicated relaxation behavior involving fast (20-30 ps) acoustical-phonon-assisted selective occupation of states located close to the mobility edge.

Place, publisher, year, edition, pages
2000. Vol. 214, 806-809 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47639DOI: 10.1016/S0022-0248(00)00241-4OAI: oai:DiVA.org:liu-47639DiVA: diva2:268535
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Pozina, GaliaBergman, PederMonemar, Bo

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