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Current status and advances in the growth of SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2000 (English)In: Diam. Relat. Mater., Vol. 9, Science Direct , 2000, Vol. 9, no 3, 432-438 p.Conference paper, Published paper (Refereed)
Abstract [en]

Recent achievements in crystal growth and homoepitaxy of SiC, mainly of the 4H polytype, have been discussed. Several growth techniques, such as seeded sublimation growth, high temperature chemical vapor deposition, sublimation epitaxy and liquid phase epitaxy have been utilized to develop technological procedures and understand the growth processes better. The advantages of either method have been stressed. The main target has been the reproducible growth of micropipe free substrate material and thick epitaxial layers for device applications. The purity of the layers has been of special interest. The results obtained are indicative for the massive progress that has been achieved in SiC crystal growth during recent years.

Place, publisher, year, edition, pages
Science Direct , 2000. Vol. 9, no 3, 432-438 p.
Series
Diamond and Related Materials, ISSN 0925-9635 ; 3-6
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47666DOI: 10.1016/S0925-9635(99)00219-8OAI: oai:DiVA.org:liu-47666DiVA: diva2:268562
Conference
10th European Conference "Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide" 1999
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-12-19

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Yakimova, RositsaJanzén, Erik

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