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Applications of optically detected magnetic resonance in semiconductor layered structures
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
2000 (English)In: Thin Solid Films, ISSN 0040-6090, Vol. 364, no 1, 45-52 p.Article in journal (Refereed) Published
Abstract [en]

A short introduction is given on the physics, method, capabilities and limitations of the optically detected magnetic resonance (ODMR) technique. The advantages of the optical detection method in terms of sensitivity and of its direct probe in recombination processes, as compared with the traditional spin resonance technique, will be demonstrated. The importance of these advantages for the ODMR applications in semiconductor layered and quantum structures will be emphasized. The ability of the ODMR technique to provide important information on physical properties of semiconductor layered structures will be highlighted. These include chemical identification, electronic and geometric structure of both radiative and non-radiative defects, carrier recombination mechanism, electronic excitation, etc. Representative cases from CVD-SiC and MBE-Si/SiGe based layered structures will be discussed as examples. The most recent progress, on-going efforts and prospects in achieving unprecedentedly high spectral, time and spatial resolution of the ODMR technique will also be outlined.

Place, publisher, year, edition, pages
2000. Vol. 364, no 1, 45-52 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47674DOI: 10.1016/S0040-6090(99)00939-6OAI: diva2:268570
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2013-10-02

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Chen, Weimin
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