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Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Lindström, J.L., Solid State Physics, Univ. of Lund, Box 118, S-221 00, Lund, Sweden.
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2000 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 72, no 2, 146-149 p.Article in journal (Refereed) Published
Abstract [en]

Photoluminescence (PL) spectroscopy is employed to investigate radiative defects created in Si during electron-irradiation at elevated temperatures. The use of high temperature during electron irradiation has been found to affect considerably the defect formation process. The effect critically depends on the temperature of the irradiation as well as doping of the samples. For carbon-lean Si wafers high temperature electron irradiation stimulates the formation of extended defects, such as dislocations and precipitates. For carbon-rich Si wafers the increase of irradiation temperature up to 300°C enhances the formation of the known carbon-related defects. In addition, several new excitonic PL lines were observed after electron irradiation at T = 450°C. The dominant new PL center gives rise to a BE PL emission at 0.961 eV. The electronic structure of the 0.961 eV defect is discussed based on temperature-dependent and magneto-optical studies.

Place, publisher, year, edition, pages
2000. Vol. 72, no 2, 146-149 p.
National Category
Engineering and Technology
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URN: urn:nbn:se:liu:diva-47679DOI: 10.1016/S0921-5107(99)00491-2OAI: oai:DiVA.org:liu-47679DiVA: diva2:268575
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Buyanova, Irina A.Monemar, Bo

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