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Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .ORCID iD: 0000-0002-6281-868X
2000 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 44, no 3, 471-476 p.Article in journal (Refereed) Published
Abstract [en]

Plasma-induced energy shifts of the conduction band minimum and of the valence band maximum have been calculated for 3C-, 2H-, 4H-, 6H-, 6H-SiC and Si. The resulting narrowing of the fundamental band gap and of the optical band gap are presented. The method utilized is based on a zero-temperature formalism within the random phase approximation. Electron-electron, hole-hole, electron-hole, electron-optical phonon and hole-optical phonon interactions have been taken into account. The calculations are based on band structure data from a relativistic, full-potential band structure calculation.

Place, publisher, year, edition, pages
2000. Vol. 44, no 3, 471-476 p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47685DOI: 10.1016/S0038-1101(99)00180-XOAI: oai:DiVA.org:liu-47685DiVA: diva2:268581
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Lindefelt, UlfSernelius, Bo

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