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Characterization of asymmetric fragmentation patterns in SFM images of porous silicon
Ferreira Da Silva, A., Laboratório Associado de Sensores e Materiais (LAS), Instituto Nacional de Pesquisas Espaciais-INPE, Cx. Postal 515, 12201-970, S.J. dos Campos, SP, Brazil.
Laboratório de Computção e Matemática Aplicada (LAC), Instituto Nacional de Pesquisas Espaciais-INPE, Cx. Postal 515, 12201-970, S.J. dos Campos, SP, Brazil.
Laboratory of Applied Physics, Department of Physics, Linkoping University, 5-58183 Linkoping, Sweden.
Oersted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK-2100 Copenhagen, Denmark, Department of Electric Power Engineering, Technical University of Denmark, Building 325, DK-2800 Lyngby, Denmark.
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2000 (English)In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 113, no 12, 703-708 p.Article in journal (Refereed) Published
Abstract [en]

Due to possible technological applications in opto-electronic devices, the interest in characterizing porous silicon structure patterns has recently increased. From scanning force microscopy (SFM) we have obtained images of different samples of porous silicon and applied pattern characterization operators on these matrices. In this paper, asymmetric spatial fragmentation in amplitude envelopes of porous silicon samples are characterized by means of a parameter that quantifies the amount of spatial asymmetry in the gradient field. The results show that this method is well suited to characterize silicon porosity quantitatively.

Place, publisher, year, edition, pages
2000. Vol. 113, no 12, 703-708 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-47688DOI: 10.1016/S0038-1098(99)00557-8OAI: oai:DiVA.org:liu-47688DiVA: diva2:268584
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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